Simplified nonplanar wafer bonding for heterogeneous device integration

We demonstrate a new, simplified nonplanar wafer bonding technique for heterogeneous device integration. The improved technique can be used to laterally integrate dissimilar semiconductor device structures on a lattice mismatched substrate. Using the technique two InP based VCSEL active regions have been integrated onto GaAs without compromising the quality of the photoluminescence. Experimental and numerical simulation results are presented.