Selective growth of self-assembled InAs quantum dots with the in-situ mask

We have selectively grown high-quality self-assembled InAs quantum dots (QDs) in required regions by using in-situ mask, where perfect selectivity has been demonstrated. The grown QDs showed high density of 3/spl times/10/sup 10/ cm/sup -2/ and high optical quality, namely, a photoluminescence peak was 1.3 /spl mu/m and the linewidth was 30 meV at room temperature. These high-quality QDs are applicable to very small optical switches for high-speed optical communications.