Design optimization of InGaAsP-InGaAlAs 1.55 /spl mu/m strain-compensated MQW lasers for direct modulation applications

A comprehensive simulation study of InGaAsP (well)/InGaAlAs(barrier) 1.55 /spl mu/m strain-compensated MQW lasers is presented. For MQWs, a uniform vertical distribution of holes is achieved due to a reduced effective hole confinement energy by optimizing the bandgap and strain of the barriers and p-doping in the active region. Some preliminary results are also presented for the manufactured lasers using these QWs indicating a good material platform.