GaAsSb-based HBTs grown by production MBE system

This work investigates the growth of GaAsSb base DHBTs with InP and InAlAs emitters using a multi-wafer production MBE system. Favorable hole mobilities were measured for carbon-doped GaAsSb from 4.3E19 cm/sup -3/ to 1.8E20 cm/sup -3/ compared to their counterparts grown by MOCVD and gas-source MBE. Highly uniform GaAsSb epilayer with Sb composition fluctuation of less than /spl plusmn/0.1% across a 4" wafer was obtained in our multi-wafer MBE system. Large area devices of GaAsSb DHBTs fabricated with InAlAs emitters have better device characteristics than their InP emitter counterparts. The feasibility of multi-wafer MBE for mass production of GaAsSb-based HBTs was demonstrated through the extremely high uniformity of 4" GaAsSb wafer and the excellent electrical properties of InAJAs/GaAsSb/InP DHBTs.