Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes with Pd/GaAs Schottky collector

We fabricated GalnP/GaAs Schottky-collector triple barrier resonant tunneling diodes (TBRTDs), and evaluated a differential series parasitic resistance towards a series resistance reduction for high frequency self-oscillation on the basis of negative differential resistance. By employing a Pd/GaAs Schottky junction as the collector electrode, the series resistance reduction was carried out as compared with PdGe ohmic-collector TBRTDs fabricated with the same wafer.