Improved transconductance n-channel enhancement/inversion mode GaAs-MISFETs with gate insulating layers formed by dry oxi-nitridation

We fabricated n-channel enhancement/inversion mode GaAs-MISFETs with nm-thin gate insulator, which is formed by oxidizing and nitriding GaAs surface. They have sharper pinch-off than GaAs-MOSFETs. Hysteresis is hardly observed. They showed transconductances of 50 mS/mm (V/sub th/ /spl sim/0 V) or 20 mS/mm (V/sub th/ /spl sim/1 V) depending on recess-etching time. They are 10 /spl sim/ 100 times higher than those of previously reported devices.