Growth of GaAsSb/InP heterostructures by OMVPE

This paper summarizes several important aspects of the growth of GaAsSb/InP heterostructures for the fabrication of high speed double heterojunction bipolar transistors (DHBTs). Some of the challenges in OMVPE growth of antimonide/phosphide compounds are discussed, including segregation, interface issues, and control of carbon at very high doping levels. We also discuss the effect of hydrogen passivation and the role of atomic ordering and compositional modulation, including its effect on electrical properties.