Middle-range visible light emitting devices fabricated using BeZnSeTe/MgZnCdSe II-VI compounds on InP substrates

Middle-range visible light emitting diodes (LEDs) were fabricated using MgZnCdSe, BeZnTe, and BeZnSeTe II-VI materials grown on InP substrates by molecular beam epitaxy. By changing the elemental compositions of BeZnSeTe active layers, yellow-green-to-orange emissions were obtained at 542, 575, and 594 nm in wavelength. A long lifetime CW operation of the 575 nm yellow LED for more than 3000 hours has been achieved. The injection current density was 130 A/cm/sup 2/. This result shows higher reliability of the BeZnSeTe LEDs against the precedent ZnCdSe/MgZnSSe-based II-VI LEDs on GaAs substrates.