A novel high speed and high voltage complementary bipolar process using 1st base-poly silicon collector and soi technique

In this paper, for the first time, we suggest a unique complementary bipolar process which is using the 1st base-poly silicon in collector interface and base poly over-etching control in emitter region to obtain high voltage and high speed, in NPN and PNP transistors concurrently. We provide a novel high voltage, high speed and latch-up free complementary process fabrication technology using SOI (silicon on insulator), STI (shallow trench isolation) and DTI (deep trench isolation) technology. The biggest strong point is the NPN and PNP transistors have the same values in terms of size and speed. The peak f
_T
for NPN and PNP transistors attained 8.0 GHz and 8.5 GHz, the BVceo for the NPN and PNP devices achieved 15 V and 17 V, respectively. These values were found to be excellent results as shown in the maximum value of Johnson-limit for the fT-BVceo product in silicon. Currently an operational amplifier product, which is higher than competitors in terms of B/W (band width) at same condition, is being developed with this process