Charging and Coulomb blockade effects in nanocrystalline Si dots embedded in SiO/sub 2/ matrix

By using capacitance-voltage (C-V) and conductance-voltage (G-V) spectroscopy, we studied charging and Coulomb blockade effects in nanocrystalline Si (nc-Si) dots which are embedded in SiO/sub 2/ matrix. Distinct frequency-dependent capacitance and conductance peaks have been observed at room temperature. These experimental results can be explained by resonant tunneling of electrons or holes into the nc-Si dots and Coulomb blockade effect in the nc-Si dots. Experimental results are in agreement with theoretical evaluation based on the model of Coulomb blockade.