InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistor with a liquid phase oxidized InGaP gate

InGaP/InGaAs/GaAs metal-oxide-semiconductor pseudomorphic high electron mobility transistors (MOS-PHEMTs) are reported. The gate dielectric is formed by oxidizing InGaP material in liquid phase. As compared to its counterpart PHEMTs, it can be observed that the MOS-PHEMT has a larger gate swing voltage, a lower gate leakage current and a higher breakdown voltage. Consequentially, the studied MOS-PHEMT provides the promise for high-power applications.