SOI active and passive integrated devices for RFIC applications

The structures of SOI active and passive integrated devices for RFIC applications are proposed, as well as the simplified processes. SOI RF LDMOS's, NMOS's inductors, capacitors, resistors and varactors have been integrated in the same SIMOX substrate successfully in the first experiment and key devices, including LDMOS's, NMOS's and inductors, show excellent or acceptable performance. The proposed integrated structures and processes are potentially feasible for multi-Gigahertz RFIC applications.