On the importance of gate shot noise in deep submicron RF NMOSFETs induced by gate oxide breakdown

The effect of gate oxide breakdown on the microwave noise performance of NMOSFETs is investigated. A serous degradation of microwave noise parameters induced by oxide breakdown has been observed. The degradation of the typical noise parameters in a 0.18 /spl mu/m NMOSFET such as noise figure, equivalent noise resistance are characterized in the frequency range of 2 to 14 GHz. Possible degradation mechanisms are investigated by the parameter extraction using a noise equivalent circuit model.