A 15-GHz single-pole double-throw annular MOSFET switch for space application

A high isolation 15-GHz radiation tolerant SPDT (single-pole double-throw) annular MOSFET switch, for space application, was designed and integrated in a SiGe BiCMOS process. Schwartz-Christoffel transformation, based on conformal mapping, and parasitic capacitance extraction methods were utilized to derive the equivalent circuit model of the octagonal annular MOSFET, which has demonstrated improved total dose radiation tolerance in CMOS circuits. The designed switch achieves 40.5-dB isolation at 15-GHz