Impact of ground line position on CMOS interconnect behavior

We investigate the impact of ground line position as well as the effects of conductive substrates with different conductivities of 10 S/m (low), 100 S/m (medium) and 10.000 S/m (high) on on-chip interconnects. Characteristic line parameters obtained from field calculations are validated with two-port network analyzer measurements of specially designed test structures in a frequency range up to 50 GHz.