A novel technique for integrated RF-MEMS system-on-chip

We present a novel platform technology, EPIES (electroplating and isotropic etching silicon), for integrated RF-MEMS system-on-chip. Thick Cu structures were deposited by electroplating and released by using XeF/sub 2/ isotropic Si etching to remove Si underneath the plated structures. The driving voltage of demonstrated Cu relay/switch is confirmed by HFSS simulation. This platform technology is simple and easy to use, IC process compatible, and suitable for the integrated RF-MEMS-SoC.