New hole trapping characterization during NBTI in 65 nm node technology with distinct nitridation processing [MOSFETs]

We have developed in this work a new characterization methodology which includes stressing and measurement in a single experimental step. This overcomes the influence of the hole detrapping effect in ultra-thin gate-oxides (T/sub OX/=1.4-1.6 nm) and enables comparison of gate-oxide nitridation impacts on negative bias temperature instability (NBTI). This new approach offers possibilities to measure the whole degradation and to improve DC NBTI characterization in operating logic circuits.