High-extinction-ratio MQW electroabsorption-modulator integrated DFB laser fabricated by in-plane bandgap energy control technique

The local bandgap energy of an InGaAs/InGaAsP multiple quantum well (MQW) structure was precisely adjusted by in-plane Eg control in one-step selective area metalorganic chemical vapor deposition (MOCVD) growth. The technique was then applied to an MQW electroabsorption-modulator integrated distributed feedback (DFB) laser. Experimental results showed superior device characteristics, such as a high extinction ratio of 25 dB and low threshold current of 15 mA.<
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