A 0.13/spl mu/m MRAM with 0.26/spl times/0.44/spl mu/m/sup 2/ MTJ optimized on universal MR-RA relation for 1.2V high-speed operation beyond 143MHz

A 0.13/spl mu/m magnetoresistive random access memory (MRAM) with 0.26/spl times/0.44/spl mu/m/sup 2/ magnetic-tunneling-junction (MTJ) is presented for 1.2V high-speed operation beyond 143MHz, where MTJ parameters are best-tuned for its maximum performance. We have found that there is a universal relationship between magneto-resistance (MR) and resistance-area products (RA) for MTJs with CoFe/AlO/sub x/ material system, and the universality is extrapolated upwards by CoFeB/AlO/sub x/ material system. Best MR-RA combination is realized on this universality. A 5.2ns sensing is demonstrated by a 0.13/spl mu/m MRAM with optimized MTJ. This advanced MRAM also shows good reliability for endurance/retention characteristics and strong access immunity in high temperature up to 150/spl deg/C.