Integration of high-performance SiGe:C HBTs with thin-film SOI CMOS

A new scheme for the integration of high-performance HBTs with thin-film SOI CMOS is demonstrated. The thickness incompatibility problem of thin-body SOI CMOS and high-performance SiGe HBTs is solved by forming HBTs on silicon islands in the BOX. Low-resistance collector wells are realized by ion implantation into the SOI substrate. SiGe:C HBTs with f/sub T//f/sub max/ values of 220 GHz/230 GHz and a BV/sub CEO/ of 2.0 V and fully-depleted CMOS transistors with 90 nm gate length are fabricated on SOI wafers with 30 nm Si thickness.