Analysis of high-speed traveling wave photodetectors using time-domain TLM method

The time-domain TLM method was used for rigorous analysis of low-temperature-grown GaAs based TWPDs. The analysis is performed taking into consideration effects like velocity mismatch, carrier life time, carrier saturation velocity, RF and optical attenuation constants and reflections from the input facet of the TWPD. The simulated data were compared with the experimental results and a very good agreement was observed.