Direct-write of PZT thick films

Lead zirconate titanate (PZT) thick films have been prepared on alumina substrates using a direct-write technology. Thick films of 50 to 200 /spl mu/m were deposited, dried and then sintered at 1000/spl deg/ to 1200/spl deg/C for 30 minutes in PbO-rich atmosphere. Comparison of the thick film properties revealed that the dielectric constant and remnant polarization of the films sintered at 1100/spl deg/C were maximum, likely due to a balance between densification and lead loss. The effects of three sintering aids, i.e., lead oxide, lithium bismuth oxide, and a borosilicate glass, have been investigated on the microstructure and electrical properties of the PZT thick films. It was observed that a 2 wt% lithium bismuth oxide additive has a positive effect on the dielectric constant and remnant polarization of the PZT thick films sintered at 1100/spl deg/C. The microstructures of the films revealed that 3 wt% additives would result in excessive shrinkage and formation of large pores and cracks at a sintering temperature of 1100/spl deg/C and above. PZT films with 2 wt.% lithium bismuth oxide showed improved dielectric constant (/spl sim/40-50%) and remanent polarization (/spl sim/65%) compared to additive-free PZT thick films. It was also found that the properties are strongly thickness dependent.