Comparison of ultrasound and /spl gamma/-radiation influence on transport properties of MnHdTe and CdMnHgTe-crystals

The paper presents theoretical and experimental investigations of narrow-gap semiconductors, MnHgTe and CdMnHgTe. Comparison of electrophysical properties of ultrasound treated and irradiated samples shows some analogy between the two kinds of external action effects, allowing an acoustic annealing of radiation defects to be carried out and, in some cases, ultrasound to be use for modeling radiation induced processes in CdMnHgTe.