Fabrication of p-i-n Si/sub 0.5/Ge/sub 0.5/ photodetectors on SiGe-on-insulator substrates

This study demonstrates the fabrication and evaluation of a Si/sub 0.5/Ge/sub 0.5/ p-i-n photodetector for 1.3 /spl mu/m light detection on SiGe-on-insulator (SGOI) substrates with the Ge content of 0.5. Gas-source-MBE grown SiGe heterostructures on SGOI substrates are promising systems not only for high-speed SiGe hetero-devices, such as strained-Si and strained-Ge MOSFETs, but also for Si-based optoelectronic integrated circuits (OEIC's).