Breakdown voltage of field plate and field-limiting ring techniques: numerical comparison

Using the recently developed two-dimensional simulator STAAB, the breakdown voltage of the field plate and field-limiting ring junction termination techniques is numerically compared for various values of junction depth, lateral width, and oxide fixed charge. The computed results demonstrate the superiority of the field plate technique over the field-limiting ring technique for planar shallow-junction high-voltage devices, both discrete and integrated.<
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