Switched-mode high-efficiency Ka-band MMIC power amplifier in GaAs pHEMT technology

A highly efficient monolithically integrated class-E power amplifier for the 22-25 GHz range is presented. The circuit is fabricated with a 0.12 /spl mu/m GaAs pHEMT process using coplanar waveguide technology. Careful selection and design of the load network is crucial for obtaining high efficiency. Measurement results show a peak power added efficiency of more than 42% at 23 GHz from a 2.2 V supply. To the authors' knowledge, this is the highest power added efficiency for class-E amplifiers at Ka-band reported up to date.