High-performance InGaAs-InP APDs on GaAs

Epitaxial layer transfer was used to fabricate In/sub 0.53/Ga/sub 0.47/As-InP avalanche photodiodes on GaAs substrates. The photodiodes displayed a gain-bandwidth product of 80 GHz, dark current of 10.20 nA at 90% of the breakdown voltage, and responsivity of 5.9 A/W at 2 V below breakdown. Performance is comparable to standard devices fabricated on InP substrates, suggesting the transfer process does not degrade material quality.