Influence of crystal growth technology on the tolerance to radiation of silicon for detectors at future accelerators

Silicon detectors represent an important option for the Large Hadron Collider (LHC) and for its upgrades in luminosity and energy, especially for the tracking system. The main limitation in their utilisation comes from the degradation in the hostile radiation environment where they can work for a long time, without the possibility to be changed. The main goal of This work is to study the role of growth technology on stable defect concentrations produced by long-time continuous irradiation in the radiation field estimated for LHC and SLHC.