Broadband low-noise amplifiers for K- and Q-bands using 0.2 /spl mu/m InP HEMT MMIC technology

Design, manufacturing, and performance of two MMIC low-noise amplifiers are presented in this paper. The circuits cover wide frequency ranges of 16-26 GHz and 25-49 GHz. The amplifiers are implemented using our in-house 0.2 p.m InP HEMT process. The measurements at room temperature show a gain higher than 14.5 dB and 11 dB and a corresponding mean noise temperature of 208 K and 235 K within the K- and Q-bands, respectively. Operated at the temperature of 10 K, the amplifiers exhibit a gain of higher than 13.5 dB and 10 dB within the frequency bands of 16-26 GHz and 23-44 GHz, respectively.