Quantum mechanical and transport aspects of resolving discrete charges in nano-CMOS device simulation

We present pragmatic approaches which allow coherent treatment of individual discrete charges in the simulation of nanoscaled MOSFETs. The quantum confinement aspects associated with the Coulomb potential well of individual charges (dopants and/or trapped carriers) are treated using the density gradient approach applied to both the channel and the bulk carriers in a drift diffusion framework. The Coulomb scattering from individual charges is treated through the real space trajectories of the carriers in a Monte Carlo framework applying short range corrections to the mesh calculated forces. The two techniques are joined together in frozen field 'atomistic' simulations of decanano MOSFETs.