DC and RF characterization of fully depleted strained SOI MOSFETs

The RF characteristics of strained SOI (SSOI) MOSFETs are reported for the first time. Fully depleted n- and p-MOSFETs were fabricated on SOI and SSOI wafers. Higher mobility was measured on the SSOI wafers and SSOI n- and p-MOSFETs showed higher transconductance as well as higher f/sub T/ and f/sub max/ than the SOI FETs for the entire gate length range studied. For n-MOSFETs with approximately 180 nm gate length, the best f/sub T/ and f/sub max/ is 75 GHz for SSOI and 60 and 69 GHz, respectively for SOI. The f/sub T/ for the p-MOSFET with 180-nm gate length is 36 GHz for SSOI and 30 GHz for SOI.