New technology of fabrication of microwave power transistors

An experimental evaluation is presented concerning the common-emitter parameters of silicon n-p-n transistors designed for a frequency band above 1 GHz. The configuration of the emitter and collector junctions essentially embodies a new concept whereby injection efficiency is increased by lateral injection. Exposure of P/sup +/ ions of Mo-n/sup +/Si ohmic contacts followed by annealing at low temperatures reduces the value of contact resistance, /spl rho//sub c/, and accelerates the recombination of minority carriers in the interface region.