Large-signal on-wafer characterization of RF conduction characteristics

For accurate modeling of large-signal circuits, the large-signal characteristics of the active devices within the circuit must be correctly measured. For microwave or RF circuits .the large-signal characteristics must he those that will be followed under high frequency excitation. The most common measurements made to provide data for large-signal models do not meet the above criteria. This paper describes a pulsed measurement approach that measures the true large-signal characteristics of semiconductor devices. The equipment is compact enough to allow the use of short cables even for on-wafer measurements, thereby minimizing any distortion.