GaInNAs and quantum dot lasers - GaAs-based lasers for telecommunications

The work reviews on the status of GaAs-based lasers for the 1.3 to 1.5 /spl mu/m range with GaInNAs active layers as well as based on In(Ga)As quantum dots (QD). Routes for further improvements like the use of GaInNAsSb as proposed by J. Harris et al., Stanford, will be discussed.