Characteristics of MOCVD-grown thin p-clad InGaAs quantum-dot lasers

Thin p-clad quantum-dot lasers grown by metal-organic chemical vapor deposition are fabricated and shown to lase in ground state for device lengths greater than 2.5 mm. The device characteristics are presented and the modal behavior is investigated. The threshold current density is found to be much larger for narrow (4 μm) stripe width devices than expected from the wider (50 μm) stripe width devices. This is attributed to gain saturation within the devices.