The N-P-N structure with C/sub 60//p-Si heterojunctions

To form C/sub 60//p-Si heterojunction the thin fullerite film can be easily evaporated on the silicon substrate. In the case of two planar terminals on the fullerite film, there is an asymmetry in conductivities of thin fullerite layer in lateral, /spl sigma//sub L/, and transverse, /spl sigma//sub T/, directions of current flow, /spl sigma//sub L//spl Lt//spl sigma//sub T/. This reason leads to path of the main current flow through one p-n heterojunction into the underlying silicon layer to the other p-n heterojunction, since the lateral component, I/sub L/, of current through the fullerite film still much less then transversal component, I/sub T/. In this way, a novel family of transistor-like electronic structures has been created. The basic characteristics of these structures named "FOS" (Fullerite on Silicon) are shown and explained simply. Since the lateral conductivity of fullerite film strongly depends on the ambient factors as humidity and chemical environmental, then the creation of sensors are possible. The combination of C/sub 60//p-Si heterojunction in n-p-n structure can be useful for the new type of transistors based on fullerite as prospective material for nanoelectronic devices.