TCAD modelling of PLAD implantations and application to sub-65nm technological nodes [plasma doping]

Plasma doping (PLAD) is an ion implantation technique under investigation to realize ultra-shallow junctions for 65 nm nodes and beyond. This technique has been modelled and is integrated in TCAD process simulation tools. The most influential parameters of PLAD have been isolated. With these parameters, a design of experiments (DOE) has been performed to interpolate a quadratic surface response model of PLAD profiles. Boron implantations were studied in the range from 1 to 8 keV and 1e15 to 5e15at/cm/sup 2/. Accuracy is very good on the whole range of parameter variations. 2D process simulations are finally shown.