Development of a MEMS-based gate to enhance cold-cathode electron field emission for space applications

A gated structure of arrays of micron-sized holes has been developed at the University of Michigan. The structure can be positioned atop any uniformly structured planar emitting surface and biased to effect electron emission. The structure is designed to be compatible with a variety of emission surface technologies such as thin films (e.g., boron nitride), carbon nanotubes, and self-assembled nanostructures.