Low threshold, CW, room temperature 1.50 /spl mu/m GaAS-based lasers

We present the first continuous wave (CW) 1.50 /spl mu/m lasers grown on GaAs substrates. These GaInNAsSb lasers operated CW at room temperature with threshold current densities as low as 1.06 kA/cm/sup 2/ and output powers as high as 140 mW. Peak output power was limited by thermal dissipation and up to 670 mW was obtained under pulsed conditions. The CW slope efficiency was 0.26 W/A, corresponding to an external quantum efficiency of 31%. The lasers also featured high CW characteristic temperatures of 139 K over the range 10-60 /spl deg/C, making them ideal for use in uncooled optical communication networks.