Structural and magnetic properties of Er doped GaN

Structural and magnetic properties of Er-doped GaN film grown by molecular beam epitaxy (MBE) on sapphire substrates (0001) were studied. Magnetization measurements were carried out between -5 and 5 T of magnetic field and it is reasonably interpreted as predominant paramagnetic character for both samples. However, clear finite steps around zero fields were observed at all the range from 5 K to 300 K, suggesting the coexistence of ferromagnetic order.