Abstract:
A variety of power devices are available to designers, each with specific advantages and limitations. For inverters, typically an IGBT combined with a p-i-n diode is used...Show MoreMetadata
Abstract:
A variety of power devices are available to designers, each with specific advantages and limitations. For inverters, typically an IGBT combined with a p-i-n diode is used to obtain high current density. Recent developments in high-voltage MOSFETs support other alternatives. For example, a MOSFET can be paralleled with an IGBT to reduce losses at low currents, while the IGBT carries the load at high currents. The current work evaluates conduction losses in this configuration, showing applicability to generic inverters.
Published in: Conference Record of the 2004 IEEE Industry Applications Conference, 2004. 39th IAS Annual Meeting.
Date of Conference: 03-07 October 2004
Date Added to IEEE Xplore: 01 November 2004
Print ISBN:0-7803-8486-5
Print ISSN: 0197-2618
Contents 