Comparative study in response time between a current-mode and a voltage-mode sense amplifier for resistive loads in MRAM

We comparatively study the response times of a current-mode and a voltage-mode sense amplifier for the resistive loads used in MRAM (magneto-resistive random access memories). In order to limit the applied voltage below a critical value of 0.4 V across the resistors, sense amplifiers with separate input/output nodes are selected. A systematic simulation study for the resistive load variations in range of 0.5 k/spl Omega/ to 8.5 k/spl Omega/ using a 0.35 /spl mu/m-CMOS technology shows that the current-mode sense amplifier shows a superior response time of at least 1.3 nsec over the voltage-mode sense amplifier.