The two-dimensional model of Gunn diode involving impact ionization

In this paper is presented a model for the numerical calculation of electronic processes in Gunn diodes, using a 2D approach, with the assumption of the validity of the Boltzmann statistics, allowing to take into account the influence on the device's characteristics of the form of contacts, and the inhomogeneities of doping impurities distribution. Impact ionization and recombination are also considered. The calculation of the system of equations is made on non-uniform grids with the application of appropriate fast steady numerical methods. The numerical analysis of Gunn diodes, working in a centimetric wavelengths range, is possible by this model.