Selectively-formed high mobility SiGe-on-Insulator pMOSFETs with Ge-rich strained surface channels using local condensation technique

A new approach to selectively form strained SiGe-on-Insulator (SGOI) channel transistors with very high Ge fraction on an SOI substrate is demonstrated. This method consists of epitaxial growth of SiGe layer with low Ge fraction and local oxidation processes. The obtained SGOI-pMOSFET with a Ge fraction of 93% has exhibited mobility enhancement up to 10 times. The thickness scalability of the SGOI channels was also confirmed down to 5 nm.