New highly scalable 3 dimensional chain FeRAM cell with vertical capacitor

There is a considerable interest in ferroelectric random access memories (FeRAMs), because they combine non volatility with fast access time and low operation voltage. However, current FeRAMs still have a large cell size compared to DRAM or Flash. To develop a small and competitive FeRAM cell is the most challenging issue for a high density and stand-alone memory. In this work we demonstrate a novel Chain FeRAM cell using a new 3 dimensional Vertical Capacitor concept for the first time.