Elevated temperature irradiation at high dose rate of commercial linear bipolar ICs

The effect of high temperature irradiations has been investigated on four types of commercial linear bipolar integrated circuits (ICs) at eight temperatures ranging from 25/spl deg/C to 150/spl deg/C for different total doses at a given dose rate. In agreement with results obtained for individual bipolar transistors, the results show that an optimum irradiation temperature exists that leads to a maximum amount of degradation. Results are compared to low dose rate (LDR) irradiations for ICs with npn and pnp input transistors.