Development of Monte Carlo modeling for proton induced charge in Si pin photodiode

High-energy protons induce Single Event Transient (SET) currents that trigger bit errors in optical data links used in radiation environments. Here, Monte Carlo modeling and the Evaluated Nuclear Data Format (ENDF) database library were combined to develop an approach for estimating proton induced SET currents in photodiodes. Modeling of the SET current distribution induced in a Si pin photodiode is compared to charge collection data measured in the laboratory. In this paper, we discuss the basic methodology of the approach and comment on any differences noted between theory and experiment.