Fabrication of high-performance InGaAsN ridge waveguide lasers with pulsed anodic oxidation

We have demonstrated high-performance InGaAsN triple-quantum-well ridge waveguide (RWG) lasers fabricated using pulsed anodic oxidation. The lowest threshold current density of 675 A/cm
²
was obtained from a P-side-down bonded InGaAsN laser, with cavity length of 1600 μm and contact ridge width of 10 μm. The emission wavelength is 1295.1 nm. The transparency current density from a batch of unbonded InGaAsN RWG lasers was 397 A/cm
²
(equivalent to 132 A/cm
²
per well). High characteristic temperature of 138 K was also achieved from the bonded 10×1600-μm
²
InGaAsN laser.