Linear array of Si-Ge heterojunction photodetectors monolithically integrated with silicon CMOS readout electronics

We describe a linear array of Ge-Si heterojunction photodiodes monolithically integrated on a complementary metal-oxide-semiconductor (CMOS) integrated circuit for detection and imaging in the near infrared. Detectors are realized by thermal evaporation of Ge films at the end of the standard CMOS process on substrates held at low temperature (300/spl deg/C). Each of the 64 detectors is connected to a front-end stage for photocurrent integration and analog-to-digital conversion.