A novel integrated interconnect network for RF switch matrix applications

In this paper, a new integrated RF interconnect network is presented. The circuit is printed on a double sided alumina substrate, eliminating the need to use multilayer manufacturing technology. The interconnect network employs finite ground coplanar (FGC) lines and vertical 3-via transitions and can be easily integrated with semiconductor and MEMS switches to form a switch matrix. Simulation and experimental results are presented for a 3/spl times/3 interconnect network. The measured results show a return loss of -20 dB and an isolation of better than -40 dB up to 30 GHz.